Synergistic Material‐Interface Engineering: Unlocking Superior Performance in PbSe Thermoelectric Modules
Siqi Wang, Yu Tian, Qian‐Qian Zhong, Rong Liu, Lizhong Su, Suyao Liu, Yingcai Zhu, Li‐Dong Zhao
Beihang University University of Hong Kong Taiyuan University of Science and Technology
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The scarcity of tellurium (Te) critically restricts the large‐scale deployment of advanced thermoelectric technologies. Here, Te‐free PbSe is demonstrated as a cost‐effective alternative for both power generation and solid‐state cooling through crystal growth, a two‐step compositional optimization, and multilayer interface engineering. Light Te alloying (<1%) effectively suppresses lattice thermal conductivity while preserving high carrier mobility, and subsequent trace Bi substitution (<0.2‰) optimizes carrier concentration without degrading carrier mobility, yielding a high power factor of ≈37.5 µW cm −1 K −2 and excellent thermoelectric performance ( ZT ≈0.6 at 300 K and a peak ZT ≈1.3 at 773 K). Furthermore, replacing conventional Ni contacts with MgNi+Cu multilayers reduces interfacial resistivity by more than twofold. Benefiting from these advances, a segmented leg with an average ZT above 1.0 over 300–773 K achieves a conversion efficiency of ≈9.5%, while a 7‐pair module delivers a maximum cooling temperature difference of ≈63.2 K. These results establish PbSe as a cost‐effective and competitive candidate for high‐performance thermoelectric power generation and solid‐state cooling across wide operating temperatures.
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材料 / 化学Advanced Thermoelectric Materials and Devices
Chalcogenide Semiconductor Thin Films · Topological Materials and Phenomena
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