Nonvolatile Ferroelectric Control of Diffusive Spin Transport at Room Temperature in Graphene/CuInP 2 S 6 Heterostructures

Nonvolatile electric control of spin transport is important for low‐power spintronic applications, but remains challenging to realize. While prior work has highlighted the significance of ferroelectric control in spintronics—primarily through magnetoelectric switching, spin–charge conversion, or spin‐dependent tunnelling—direct nonvolatile control of the diffusive spin current itself at room temperature has not been demonstrated. Here, we demonstrate a graphene lateral spin valve incorporating a van der Waals ferroelectric top gate, CuInP 2 S 6 , that enables bistable, nonvolatile modulation of diffusive spin transport at 300 K. At an identical applied gate bias, opposite ferroelectric polarization states produce distinct spin signals, demonstrating retained‐state control beyond ordinary electrostatic gating, and yielding a maximum modulation exceeding 100% under optimized operating conditions. Hanle spin‐precession measurements further reveal distinct effective spin‐transport states for the two remanent ferroelectric states, consistent with nonvolatile ferroelectric modulation of spin transport. These results highlight a promising route toward room‐temperature, nonvolatile electrical control of spin transport by using van der Waals heterostructures.