Novel Optoelectronic Reconfigurable Transistors Based on Graphene/VO 2 Heterojunction for Efficient Neuromorphic Perception, Computation, and Storage
Danke Chen, Yuning Li, Xiaoqiu Tang, Jingye Sun, Xuan Yao, Peizhi Yu, Xue Li, Qing You 等 11 位
Beijing Jiaotong University Tsinghua University
阅读操作
确认中在文库中上传 PDF 后可生成中文音频讲解。
摘要与影响
Optoelectronic artificial neuromorphic devices, inspired by biological vision systems, have overcome bottlenecks of the von Neumann architecture. The innovation and integration of neuromorphic hardware systems represent a pivotal challenge for advancing the iteration of artificial intelligence. Accordingly, a novel optoelectronic reconfigurable neuromorphic transistor (ORNT) is designed to integrate three functions, enabling the perception, computation, and storage of optical information in a manner analogous to visual nervous systems. Based on the electrode‐inserted graphene/VO 2 nanoparticles heterostructure and photovoltaic effect, the ORNT demonstrates broadband self‐powered responsiveness from the ultraviolet to near‐infrared (365–940 nm). Leveraging the photogating effect and the photoinduced phase transition in VO 2 , the differentiated electrode design enables wide‐electrode ORNTs to exhibit synaptic behavior under bias voltages, whereas narrow‐electrode ORNTs demonstrate data storage capability and multistage photomodulation. Furthermore, an integrated optical communication and processing‐in‐memory system is developed, achieving a full‐process demonstration from optical perception to computation and storage. Overall, the ORNTs introduced in this work provide an innovative strategy for optimizing the hardware resource allocation of chips and enhancing the adaptability and scalability of systems.
逐年被引趋势
关键指标
同类平均 = 1
同领域 · 同年份 · 同类型
Google Scholar 与 OpenAlex 的被引统计范围不同,数值存在差异属正常。
AI 辅助阅读
依据:摘要
可就本文提问;依据不足时会说明。
学术脉络
学科主题
工程Advanced Memory and Neural Computing
Transition Metal Oxide Nanomaterials · Photoreceptor and optogenetics research
参考文献 63
此处列出前 3 条
引用本文 3
按被引量排序,此处列出前 3 条