IGZO‐TFT technology for large‐screen 8K display
Yoshihito Hara, Tetsuo Kikuchi, Hideki Kitagawa, Junichi Morinaga, Hiroyuki Ohgami, H. Imai, Tohru Daitoh, Takuya Matsuo
Mi Corporation (United States)
内容与影响
We succeeded in G8 factory for mass production of Indium–Gallium–Zink–Oxide thin‐film transistor (IGZO‐TFT) for the first time in the world. The initial TFT process was an etching stop‐type TFT, but now, we are mass producing channel etching‐type TFTs. And, its application range is smartphones, tablets, PCs, monitors, TV, and so on. In particular, because of recent demands for high‐resolution and narrow frame, our IGZO display has been advanced in technology development with gate driver in panel. In this paper, we report development combining low resistance technology and the latest IGZO‐TFT (IGZO5) for large‐screen 8K display.
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工程Thin-Film Transistor Technologies
CCD and CMOS Imaging Sensors · Transition Metal Oxide Nanomaterials
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