Research Progress and Challenges of GaN‐Based Micro‐LEDs in Short‐Reach Optical Interconnects

With the explosive development of the artificial intelligence industry, data centers are facing unprecedented challenges in interconnect bandwidth. Traditional electrical interconnects are gradually approaching their physical limits in terms of bandwidth and power consumption. Optical interconnects based on lasers, with their high bandwidth and low power advantages, have become a key technology for high‐performance interconnects. Beyond that, Micro‐LEDs, as a novel light source, offer unique benefits such as microscale size, high modulation bandwidth, low power consumption, excellent thermal stability, and ease of array integration. This review systematically surveys recent advances in Micro‐LEDs for short‐reach optical interconnect applications. We first analyze the key factors governing communication performance, with a particular focus on modulation bandwidth and power consumption, and then summarize device‐level optimization strategies from multiple perspectives, including epitaxial structures, device structures, and equivalent‐circuit models. Subsequently, the evolution of Micro‐LED‐based communication architectures is discussed, highlighting the significant potential of parallel transmission. From our perspective, the high degree of integrability, the exceptionally high upper limit of achievable data rates, and the inherent capability for parallel transmission collectively suggest that Micro‐LEDs should not be regarded merely as alternative light sources. Instead, they represent promising candidate for future short‐reach optical interconnect technologies.