Comparative Analysis of Degradation Mechanisms in Mainstream n‐Type Silicon Photovoltaic Modules

This study presents a comparative analysis of three major failure modes in n‐type photovoltaic modules—hotspot effects, ultraviolet‐induced degradation (UVID), and potential‐induced degradation (PID)—to address critical reliability concerns. Using standardized IEC testing protocols, we systematically evaluated multiple module technologies. Key findings reveal the following: (1) the correlation between technological configurations and hotspot temperature distribution under extreme shading conditions; (2) the relative susceptibility of tunnel oxide passivating contact (TOPCon), heterojunction with intrinsic thin‐layer (HJT), and back‐contact (BC) prototypes to UVID; and (3) distinct PID mechanisms and degradation pathways at the front versus rear surfaces across different architectures. The results provide essential theoretical and empirical insights to support the development of more reliable photovoltaic products.