QDs of Wide Band Gap II–VI Semiconductors Luminescent Properties and Photodetector Applications
M. Abdullah, B. Al-Nashy, Ghenadii Korotcenkov, Amin H. Al‐Khursan
Thi Qar University University of Misan Moldova State University
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摘要与影响
This chapter deals with II–VI ZnS, ZnSe, and CdS quantum dots (QD) photodiodes (PDs), specializing in the ultraviolet-visible range. It covers their synthesis methods, including those for increasing transfer, QD solids, extending synthesis through microwave-assisted, and so on. It deals with passivating QDs to extend the spectrum, reducing environmental effects. Doping QDs also extend the spectrum and give more controllability. The hybrid QD PDs, including nanorod, nanowire, and nanobelt, also organic/inorganic QDs are also studied. The two-dimensional hybrid PDs such as graphene and MXene are also covered. Most of these structures are of type II heterostructures that advise the charge separation and give the best device performance. Flexible devices are also discussed.
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