研究论文
Modeling of SiO2 CVD from TEOS/ozone in a separate-gas-injection reactor
Eui Jung Kim, William N. Gill
University of Ulsan Rensselaer Polytechnic Institute
来源Korean Journal of Chemical Engineering
年份1998
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学科主题
工程Semiconductor materials and devices
Advanced Materials and Semiconductor Technologies · Plasma Diagnostics and Applications
参考文献 17
REMOTE PLASMA CHEMICAL VAPOR DEPOSITION ( RPCVD ) OF LOW TEMPERATURE SILICON OXIDE
被引 2YoungBaePark, JinKyuKang, ShiWooRhee · Korean Journal of Chemical Engineering · 1996
CHARACTERISTICS OF SILICON OXIDE FILMS PREPARED BY CHEMICAL VAPOR DEPOSITION USING ECR PLASMA SOURCE
被引 2BupJuJeon, InHwanOh, TaeHoonLim · Korean Journal of Chemical Engineering · 1997
Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling
被引 50Iqbal Shareef, Gary W. Rubloff, M. Anderle · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995
此处列出前 3 条
引用本文 4
Experimental analysis of R22 and R407c flow through electronic expansion valve
被引 43Chuan Zhang, MA Shan-wei, Jiangpin Chen · Energy Conversion and Management · 2005
Artificial neural network models for depicting mass flow rate of R22, R407C and R410A through electronic expansion valves
被引 27Bahaa Saleh, Ayman A. Aly · International Journal of Refrigeration · 2015
Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure
被引 7S A Konakov, Valeria V. Krzhizhanovskaya · Journal of Physics Conference Series · 2015
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