研究论文
Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors
Yaodong Liu, Jing Xu, Jianfeng Gao, Jinbiao Liu, Dan Zhang, Xuebing Zhou, Xianglie Sun, Yongliang Li 等 14 位
Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences Guangdong Academy of Sciences
来源Journal of Materials Science Materials in Electronics
年份2021
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逐年被引趋势
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11
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0.89
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同类平均 = 1
同类平均 = 1
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学术脉络
学科主题
物理Semiconductor materials and interfaces
Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
参考文献 40
Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films
被引 57Jun Luo, Zhi‐Jun Qiu, Chaolin Zha · Applied Physics Letters · 2010
Handbook of Semiconductor Manufacturing Technology
被引 532R.R. Doering, Yoshio Nishi · 2010
Ni(Pt) silicide with improved thermal stability for application in DRAM periphery and replacement metal gate devices
被引 13T. Schram, A. Spessot, R. Ritzenthaler · Microelectronic Engineering · 2013
此处列出前 3 条
引用本文 11
A Refined Ladder Transmission Line Model for the Extraction of Significantly Low Specific Contact Resistivity
被引 14Xianglie Sun, Jun Luo, Yaodong Liu · IEEE Transactions on Electron Devices · 2022
Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi<sub>2</sub> Through Ta Interlayer for Diffusion Barrier
被引 13Min-Su Kim, Seong‐Hyun Hwang, Seung‐Hwan Kim · IEEE Electron Device Letters · 2023
Crystallinity and composition of Sc<sub>1−<i>x</i>(−<i>y</i>)</sub>Si<sub> <i>x</i> </sub>(P<sub> <i>y</i> </sub>) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications
被引 8Bert Pollefliet, Clément Porret, Jean-Luc Everaert · Japanese Journal of Applied Physics · 2024
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