研究论文开放获取
Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors
Youxi Lin, D. Donetsky, Ding Wang, David Westerfeld, G. Kipshidze, L. Shterengas, Wendy L. Sarney, Stefan P. Svensson 等 9 位
Stony Brook University DEVCOM Army Research Laboratory
来源Journal of Electronic Materials
年份2015
阅读操作
确认中在文库中上传 PDF 后可生成中文音频讲解。
摘要与影响
摘要 · 节选
暂未获取摘要。可打开原文或 PDF，后续可基于全文生成更完整的速读。
逐年被引趋势
630
16
17
618
19
20
21
22
23
24
25
关键指标
32
被引次数 · OpenAlex
1.93
领域内被引倍数
同类平均 = 1
同类平均 = 1
前 14%
引用位次
同领域 · 同年份 · 同类型
同领域 · 同年份 · 同类型
20
参考文献
Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。
AI 辅助阅读
依据：文献信息
论文问答
当前基于文献信息回答
可就本文提问；依据不足时会说明。
学术脉络
学科主题
工程Advanced Semiconductor Detectors and Materials
Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
参考文献 20
Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors
被引 100P. C. Klipstein, Y. Livneh, A. Glozman · Journal of Electronic Materials · 2014
Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors
被引 10Youxi Lin, Ding Wang, D. Donetsky · Semiconductor Science and Technology · 2014
Ordering-induced band-gap reduction in InAs1−x Sbx (x≊0.4) alloys and superlattices
被引 82S. R. Kurtz, L. R. Dawson, R. M. Biefeld · Physical review. B, Condensed matter · 1992
此处列出前 3 条
引用本文 32
InAsSb-Based Infrared Photodetectors: Thirty Years Later On
被引 102Antoni Rogalski, Piotr Martyniuk, M. Kopytko · Sensors · 2020
Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates
被引 27Krzysztof Murawski, Emilia Gomółka, M. Kopytko · Progress in Natural Science Materials International · 2019
Bulk InAsSb with 0.1 eV bandgap on GaAs
被引 24Wendy L. Sarney, Stefan P. Svensson, Ye Xu · Journal of Applied Physics · 2017
按被引量排序，此处列出前 3 条