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Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors
Youxi Lin, D. Donetsky, Ding Wang, David Westerfeld, G. Kipshidze, L. Shterengas, Wendy L. Sarney, Stefan P. Svensson 等 9 位
Stony Brook University DEVCOM Army Research Laboratory
来源Journal of Electronic Materials
年份2015
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工程Advanced Semiconductor Detectors and Materials
Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
参考文献 20
Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors
被引 100P. C. Klipstein, Y. Livneh, A. Glozman · Journal of Electronic Materials · 2014
Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors
被引 10Youxi Lin, Ding Wang, D. Donetsky · Semiconductor Science and Technology · 2014
Ordering-induced band-gap reduction in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">InAs</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sb</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>(<i>x</i>≊0.4) alloys and superlattices
被引 82S. R. Kurtz, L. R. Dawson, R. M. Biefeld · Physical review. B, Condensed matter · 1992
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施引文献 32
InAsSb-Based Infrared Photodetectors: Thirty Years Later On
被引 98Antoni Rogalski, Piotr Martyniuk, M. Kopytko · Sensors · 2020
Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates
被引 27Krzysztof Murawski, Emilia Gomółka, M. Kopytko · Progress in Natural Science Materials International · 2019
Bulk InAsSb with 0.1 eV bandgap on GaAs
被引 24Wendy L. Sarney, Stefan P. Svensson, Ye Xu · Journal of Applied Physics · 2017
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