研究论文
FINFET Based IL 7 T SRAM Cell: Reliable, Silicon Area- and Power Efficient for Use in Portable Medical Equipment
Lal John Basha Shaik, Atul S.M. Tripathi
SRM University VIT-AP University
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学术脉络
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工程Low-power high-performance VLSI design
Advancements in Semiconductor Devices and Circuit Design · Analog and Mixed-Signal Circuit Design
参考文献 38
The impact of random doping effects on CMOS SRAM cell
被引 87B. Cheng, S. Roy, Asen Asenov · 2004
FinFET scaling to 10 nm gate length
被引 598Bin Yu, Leland Chang, Safayet Ahmed · 2003
Stable SRAM cell design for the 32 nm node and beyond
被引 569L. Chang, David Fried, J. M. Hergenrother · 2005
此处列出前 3 条
引用本文 5
A power/energy-efficient 8T SRAM with reduced minimum operation voltage
被引 4Shams Ul Haq, Erfan Abbasian, Tabassum Khurshid · Physica Scripta · 2025
A low-power 9T SRAM with half-selection resilient in carbon nanotube field-effect transistor technology for battery-operated systems
被引 3Marziyeh Narouei, Ahmed Elbarbary, P. Tharun Kumar · Physica Scripta · 2025
A low-voltage SRAM with write-wordline-controlled asymmetric virtual-ground write assist and an embedded read buffer for communication integrated circuits
被引 0B. Bhaskar Reddy, Y. L. Ajay Kumar, Gopisetty Ramesh · AEU - International Journal of Electronics and Communications · 2026
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