书籍章节
From nanoLEDs to the realization of RGB-emitting microLEDs
Zhaoxia Bi, Zhen Chen, Fariba Danesh, Lars Samuelson
Lund University Glo (Sweden)
来源Semiconductors and semimetals
年份2021
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学术脉络
学科主题
物理GaN-based semiconductor devices and materials
ZnO doping and properties · Ga2O3 and related materials
参考文献 50
High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
被引 455Michael R. Krames, Mari Ochiai-Holcomb, G. E. Höfler · Applied Physics Letters · 1999
Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells
被引 11T. Malinauskas, A. Kadys, Tomas Grinys · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2012
此处列出前 3 条
引用本文 14
Recent progress in red light-emitting diodes by III-nitride materials
被引 87Daisuke Iida, Kazuhiro Ohkawa · Semiconductor Science and Technology · 2021
High efficiency InGaN nanowire tunnel junction green micro-LEDs
被引 26Xianhe Liu, Yi Sun, Yakshita Malhotra · Applied Physics Letters · 2021
Applications of lasers: A promising route toward low-cost fabrication of high-efficiency full-color micro-LED displays
被引 22Shouqiang Lai, Shibiao Liu, Zilu Li · Opto-Electronic Science · 2023
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