研究论文
Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS
D. Marseilhan, Jean‐Paul Barnes, F. Fillot, Jean‐Michel Hartmann, Ph. Holliger
Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Laboratoire d'Électronique des Technologies de l'Information
来源Applied Surface Science
年份2008
阅读操作
确认中在文库中上传 PDF 后可生成中文音频讲解。
摘要与影响
摘要 · 节选
暂未获取摘要。可打开原文或 PDF，后续可基于全文生成更完整的速读。
逐年被引趋势
740
16
17
18
19
20
22
23
724
25
26
关键指标
50
被引次数 · OpenAlex
4.19
领域内被引倍数
同类平均 = 1
同类平均 = 1
前 6%
引用位次
同领域 · 同年份 · 同类型
同领域 · 同年份 · 同类型
12
参考文献
Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。
AI 辅助阅读
依据：文献信息
论文问答
当前基于文献信息回答
可就本文提问；依据不足时会说明。
学术脉络
学科主题
工程Ion-surface interactions and analysis
Electron and X-Ray Spectroscopy Techniques · Advanced Materials Characterization Techniques
参考文献 12
Facts and artefacts in the characterization of Si/SiGe multiayers with SIMS
被引 30Peer C. Zalm, C. J. Vriezema, Dirk J. Gravesteijn · Surface and Interface Analysis · 1991
Work function shifts and variations of ionization probabilities occurring during SIMS analyses using an in situ deposition of Cs0
被引 35Tom Wirtz, H.‐N. Migeon · Surface Science · 2004
Initial stages of cesium incorporation on keV- Cs+ -irradiated surfaces: Positive-ion emission and work-function changes
被引 51Hubert Gnaser · Physical review. B, Condensed matter · 1996
此处列出前 3 条
引用本文 50
Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography
被引 140Armand Béché, Jean‐Luc Rouvière, Jean‐Paul Barnes · Ultramicroscopy · 2013
Improved reverse bias stability in p–i–n perovskite solar cells with optimized hole transport materials and less reactive electrodes
被引 112Fangyuan Jiang, Yangwei Shi, Tanka Raj Rana · Nature Energy · 2024
Dark field electron holography for strain measurement
被引 58Armand Béché, Jean‐Luc Rouvière, Jean‐Paul Barnes · Ultramicroscopy · 2010
按被引量排序，此处列出前 3 条