研究论文
High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose
Xinzhe Du, Zhen Luo, Shengchun Shen, Weiping Bai, Hui Gan, Yuewei Yin, Xiaoguang Li
University of Science and Technology of China Henan University Collaborative Innovation Center of Advanced Microstructures Nanjing University
来源Applied Surface Science
年份2023
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工程Ferroelectric and Negative Capacitance Devices
Semiconductor materials and devices · MXene and MAX Phase Materials
参考文献 39
Band offsets of ultrathin high- κ oxide films with Si
被引 274Eric Bersch, Sylvie Rangan, R. A. Bartynski · Physical Review B · 2008
Prospective of Semiconductor Memory Devices: from Memory System to Materials
被引 243Cheol Seong Hwang · Advanced Electronic Materials · 2015
Phase control of HfO2-based dielectric films for higher-k materials
被引 15Jae Ho Lee, Il-Hyuk Yu, Sang‐Young Lee · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2014
此处列出前 3 条
引用本文 12
Exploring the Morphotropic Phase Boundary in HfO 2 ‐Based Ferroelectrics for Advanced High‐k Dielectrics
被引 14Seungyeol Oh, Hojung Jang, Mostafa Habibi · Advanced Materials Technologies · 2024
Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation
被引 6Haiyi Zhang, Yuchen Tu, Zijian Wang · Journal of Physics D Applied Physics · 2024
Synergistic Modulation of Polarization and Leakage Current in MPB‐HZO Capacitors via TiO 2 Interlayer
被引 5Changhyeon Han, Been Kwak, Joonhyeok Choi · Advanced Electronic Materials · 2025
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