研究论文
Interface kinetic engineering of heavily N-doped 4H-SiC: From surface step dynamics to polytype stability
Jiaqi Tian, Laibin Zhao, Jiangfeng Wang, Yan Zhang, Xinglong Wang, Haojun Li, Shan Yang, Li Xian Sun 等 13 位
Shandong University State Key Laboratory of Crystal Materials
来源Applied Surface Science
年份2026
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学术脉络
学科主题
工程Silicon Carbide Semiconductor Technologies
GaN-based semiconductor devices and materials · Advanced ceramic materials synthesis
参考文献 44
Strain relaxation and dislocation reduction in AlGaN step‐graded buffer for crack‐free GaN on Si (111)
被引 70Benjamin Leung, Jung Woo Han, Qian Sun · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2014
The growth of crystals and the equilibrium structure of their surfaces
被引 5,339W. K. Burton, N. Cabrera, Frederick Charles Frank · Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences · 1951
Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport
被引 80Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi · Journal of Crystal Growth · 2009
此处列出前 3 条
引用本文 1
Nucleation behavior simulations of SiC epitaxy on different-orientation substrates by molecular dynamics
被引 0Shichen Zhu, Yong Li, Qun Tan · Journal of Crystal Growth · 2026
按被引量排序，此处列出前 3 条