研究论文

Direct van deer Waals epitaxy of multiband-emitting InGaN-based LEDs on graphene for phosphor-free white light illumination

Yu Xu, Bing Cao, En Zhao, Yipu Qu, Yuning Wang, Yumin Zhang, Jianfeng Wang, Chinhua Wang 等 9 位

Chinese Academy of Sciences　Suzhou Institute of Nano-tech and Nano-bionics　Soochow University

来源Journal of Alloys and Compounds

年份2022

DOI10.1016/j.jallcom.2022.163712

原文https://doi.org/10.1016/j.jallcom.2022.163712

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逐年被引趋势

320

324

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0.86

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前 31%

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学术脉络

学科主题

物理

GaN-based semiconductor devices and materials

Ga2O3 and related materials · 2D Materials and Applications

参考文献 28

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

R. Singh, D. Doppalapudi, T. D. Moustakas · Applied Physics Letters · 1997

被引 487

Phase separation in InGaN grown by metalorganic chemical vapor deposition

N. A. El-Masry, E. L. Piner, S. X. Liu · Applied Physics Letters · 1998

被引 325

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka · Nature · 2012

被引 431

此处列出前 3 条

引用本文 7

Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors

Chang‐Hsun Huang, Chia‐Yi Wu, Yen‐Fu Lin · Advanced Functional Materials · 2023

被引 16

Epitaxy and bonding of peelable ZnO film on graphene/ZnO substrate

Peng Wang, Xinhua Pan, Ning Wang · Journal of Alloys and Compounds · 2022

被引 9

Recent progress of indium-bearing group-III nitrides and devices: a review

Yixun He, Linhao Li, Jiaying Xiao · Optical and Quantum Electronics · 2024

被引 4

按被引量排序，此处列出前 3 条