研究论文
Wafer-scale N-polar GaN heterogeneous structure fabricated by surface active bonding and laser lift-off
Ye Tian, Runhua Gao, Xinhua Wang, Fengwen Mu, Peng Xu, Guoliang Ma, Chao Yuan, Sen Huang 等 11 位
Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences ON Semiconductor (United States)
来源Journal of Alloys and Compounds
年份2024
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逐年被引趋势
320
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326
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6
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1.35
领域内被引倍数
同类平均 = 1
同类平均 = 1
前 21%
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同领域 · 同年份 · 同类型
同领域 · 同年份 · 同类型
25
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学术脉络
学科主题
物理GaN-based semiconductor devices and materials
Semiconductor materials and devices · Ga2O3 and related materials
参考文献 25
Line beam processing for laser lift‐off of GaN from sapphire
被引 29Ralph Delmdahl, Rainer Pätzel, Jan Brune · physica status solidi (a) · 2012
Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding
被引 21Kevin Ryu, J. C. Roberts, E. L. Piner · IEEE Electron Device Letters · 2011
N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
被引 66J.W. Chung, E. L. Piner, Tomás Palacios · IEEE Electron Device Letters · 2009
此处列出前 3 条
引用本文 6
GaN radiofrequency components and power amplifiers for next-generation 5G communications
被引 13Muhammad Yaseen, Fayu Wan, Fareeha Siddique · Microelectronic Engineering · 2024
Research progress on self-heating effects and thermal management strategies of GaN-based electronic devices
被引 7Qi Luo, Zhi-Qiang Fan, Dan Wu · Journal of Physics Condensed Matter · 2025
GaN HEMTs on 4H-SiC/Diamond Engineered Substrate With Enhanced Heat Dissipation
被引 3Yipei Lei, Xinhua Wang, Fengwen Mu · IEEE Electron Device Letters · 2025
按被引量排序，此处列出前 3 条