研究论文
Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
Stefano Leone, Henrik Pedersen, Anne Henry, Olof Kordina, Erik Janzén
Linköping University
来源Journal of Crystal Growth
年份2009
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工程Silicon Carbide Semiconductor Technologies
GaN-based semiconductor devices and materials · Semiconductor materials and interfaces
参考文献 25
High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
被引 5Jie Zhang, Janice Mazzola, Swapna G. Sunkari · Materials science forum · 2008
Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
被引 2Xingfang Liu, Guo Sheng Sun, Jin Min Li · Materials science forum · 2007
Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
被引 54Rachael L. Myers‐Ward, Brenda L. VanMil, Robert E. Stahlbush · Materials science forum · 2009
此处列出前 3 条
引用本文 47
Bulk and epitaxial growth of silicon carbide
被引 221Tsunenobu Kimoto · Progress in Crystal Growth and Characterization of Materials · 2016
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
被引 159Maria Cabello, Victor Soler, Gemma Rius · Materials Science in Semiconductor Processing · 2017
Mechanisms of growth and defect properties of epitaxial SiC
被引 157Francesco La Via, Massimo Camarda, Antonino La Magna · Applied Physics Reviews · 2014
按被引量排序，此处列出前 3 条