研究论文
MBE grown Ga2O3 and its power device applications
Kohei Sasaki, Masataka Higashiwaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi
National Institute of Information and Communications Technology Japan Science and Technology Agency
来源Journal of Crystal Growth
年份2013
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学术脉络
学科主题
材料 / 化学Ga2O3 and related materials
ZnO doping and properties · Advanced Photocatalysis Techniques
参考文献 11
Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3
被引 884H. H. Tippins · Physical Review · 1965
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
被引 617Kohei Sasaki, Akito Kuramata, Takekazu Masui · Applied Physics Express · 2012
Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
被引 599Naoyuki Ueda, Hideo Hosono, Ryuta Waseda · Applied Physics Letters · 1997
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引用本文 346
A review of Ga2O3 materials, processing, and devices
被引 3,113S. J. Pearton, Jiancheng Yang, Patrick H. Cary · Applied Physics Reviews · 2018
High-quality β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth
被引 1,057Akito Kuramata, Kimiyoshi Koshi, Shinya Watanabe · Japanese Journal of Applied Physics · 2016
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
被引 665Zbigniew Galazka, K. Irmscher, Reinhard Uecker · Journal of Crystal Growth · 2014
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