研究论文
Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, K. Kurashige 等 9 位
National Institute of Advanced Industrial Science and Technology Showa Denko Materials Co., Ltd. (Japan) Hitachi (Japan) Nagoya University
来源Journal of Crystal Growth
年份2013
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工程Silicon Carbide Semiconductor Technologies
Advanced ceramic materials synthesis · Solidification and crystal growth phenomena
参考文献 11
Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt
被引 48Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto · Materials science forum · 2012
Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
被引 33Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyuki Yashiro · Materials science forum · 2012
High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth
被引 83Yuji Yamamoto, Shunta Harada, Kazuaki Seki · Applied Physics Express · 2012
此处列出前 3 条
引用本文 73
Bulk and epitaxial growth of silicon carbide
被引 221Tsunenobu Kimoto · Progress in Crystal Growth and Characterization of Materials · 2016
Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution
被引 61Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi · Journal of Crystal Growth · 2015
Thermodynamic evaluation of the C–Cr–Si, C–Ti–Si, and C–Fe–Si systems for rapid solution growth of SiC
被引 56Taka Narumi, Sakiko Kawanishi, Takeshi Yoshikawa · Journal of Crystal Growth · 2014
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