研究论文
In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps
Kei Hiraiwa, Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
Meijo University Nagoya University
来源Journal of Crystal Growth
年份2019
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物理GaN-based semiconductor devices and materials
Acoustic Wave Resonator Technologies
参考文献 26
GaN and ZnO-based Materials and Devices
被引 122S. J. Pearton · Springer series in materials science · 2012
Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire
被引 54Frank Brunner, A. Knauer, Tony Schenk · Journal of Crystal Growth · 2008
Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode
被引 17Joseph Dion, Q. Fareed, Bin Zhang · Journal of Electronic Materials · 2011
此处列出前 3 条
引用本文 4
In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors
被引 5Kei Hiraiwa, Wataru Muranaga, Sho Iwayama · Applied Physics Express · 2020
Optically pumped GaN-based vertical cavity surface emitting laser with strain-compensated AlGaN/InGaN distributed Bragg reflector
被引 1Takeshi KAWASHIMA, Morimasa Kaminishi, Chiharu Kimura · Applied Physics Express · 2025
Use of electrochemistry in mini-/micro-LEDs and VCSELs
被引 0Jin-Ho Kang, Rami T. ElAfandy, Bingjun Li · 2022
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