研究论文
Optimization of temperature field and crystal growth in the PVT method for high-quality 8-inch silicon carbide single crystal growth
Yanzhou Ji, Xiaochen Wang, Junjie Zhang, Junjie Zhang, Boqian Liu, Junzhi Yang, Guanying Chen, Shengtao Zhang
Harbin Institute of Technology Harbin Electric Corporation (China)
来源Journal of Crystal Growth
年份2025
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逐年被引趋势
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3.34
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同类平均 = 1
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学术脉络
学科主题
工程Silicon Carbide Semiconductor Technologies
Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies
参考文献 25
Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
被引 9Hiroshi Tsuge, Shohji Ushio, Shinya Sato · Materials science forum · 2013
Study of the equilibrium processes in the gas phase during silicon carbide sublimation
被引 114S. K. Lilov · Materials Science and Engineering B · 1993
Computational simulation of gas flow and heat transfer near an immersed object in fluidized beds
被引 20Weimin Gao, Lingxue Kong, Peter D. Hodgson · Advances in Engineering Software · 2007
此处列出前 3 条
引用本文 14
Improved thermal shock resistance and bonding strength of TaC coatings by in situ-formed transitional layers on graphite substrates
被引 6Zhao Zhang, Hongbin Pu, Hongwei Zhang · Ceramics International · 2025
Advances in SiC growth mechanisms and defects control strategies enhanced by machine learning perspective
被引 3Muhammad Azam, Wenjia Su, Junfeng Wang · Materials Today Communications · 2025
Optimization of thermal field on PVT method of 8-inch SiC crystal growth by numerical simulation
被引 2Yunjie Zhu, Wataru Saito, Shin–ichi Nishizawa · Journal of Crystal Growth · 2026
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