研究论文
Anisotropy mechanism of material removal and damage formation in single crystal 4H-SiC scratching
Xiaoyu Bao, Wen Zheng, Huixin Xing, Xingyu Wang, Qingliang Zhao, Yong Lu, Sheng Wang
Harbin Institute of Technology
来源Journal of Materials Processing Technology
年份2025
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逐年被引趋势
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26
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26
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7.74
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同类平均 = 1
同类平均 = 1
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学术脉络
学科主题
工程Advanced Surface Polishing Techniques
Metal and Thin Film Mechanics · Advanced machining processes and optimization
参考文献 56
Fundamentals of silicon carbide technology: growth, characterization, devices and applications
被引 380Tsunenobu Kimoto, James A. Cooper · International Linear Collider · 2014
Influence of abrasive grain geometry on friction coefficient and wear rate in belt finishing
被引 92Abdeljalil Jourani, Benjamin Hagège, Salima Bouvier · Tribology International · 2012
Analytical models of scratch hardness
被引 300John A. Williams · Tribology International · 1996
此处列出前 3 条
引用本文 26
Molecular dynamics simulation of scratching parameters in diamond grit scratching single-crystal silicon carbide
被引 10Jianpu Xi, Xinxing Ban, Wenlan Ba · Materials Science in Semiconductor Processing · 2025
Predictive modeling and experimental investigation of material removal profiles in ultrasonic-assisted shear thickening polishing of 4H-SiC crystals
被引 8Baochen Sun, Zixuan Wang, Zixuan Wang · Tribology International · 2025
Progress and critical challenges in slicing of thin semiconductor wafers using ultra-fine diamond wire
被引 7Peiqi Ge, Zhecan Cao, Zongqiang Li · Materials Science in Semiconductor Processing · 2025
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