研究论文
Amorphous indium gallium zinc oxide thin film transistors (a-IGZO-TFTs): Exciting prospects and fabrication challenges
J. Ajayan, S. Sreejith, N. Aruna Kumari, M. Manikandan, Sachidananda Sen, Maneesh Kumar
Vellore Institute of Technology University Presidency University Indian Institute of Technology Roorkee
来源Microelectronic Engineering
年份2025
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工程Thin-Film Transistor Technologies
CCD and CMOS Imaging Sensors · Transition Metal Oxide Nanomaterials
参考文献 245
Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors
被引 28Thanh Thuy Trinh, Kyungsoo Jang, S. Velumani · Materials Science in Semiconductor Processing · 2015
Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing
被引 20Sang-Jin Jeon, Jong-Woong Chang, Kwang-Soo Choi · Materials Science in Semiconductor Processing · 2010
Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving
被引 70Sejin Hong, Suhui Lee, Mallory Mativenga · IEEE Electron Device Letters · 2014
此处列出前 3 条
施引文献 13
Advancements of Amorphous IGZO-Based Transistors: Materials, Processing, and Devices
被引 23Jae Young Kim, Hyunseong Kim, D.H Kim · ACS Applied Electronic Materials · 2025
Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs)
被引 4Yih-Shing Lee, Chih‐Hsiang Chang, Bing-Shin Le · Nanomaterials · 2025
Thermal Atomic Layer Etching of Indium Gallium Zinc Oxide (IGZO), In <sub>2</sub> O <sub>3</sub> , Ga <sub>2</sub> O <sub>3</sub> , and ZnO Using Sequential Hydrogen Fluoride and Acetylacetone Exposures
被引 3Troy A. Colleran, А. И. Абдулагатов, Jonathan L. Partridge · The Journal of Physical Chemistry C · 2025
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