研究论文
Long-term electrical stability of next generation LV Trench IGBT at Hitachi ABB Power Grids
Nick Schneider, Elizabeth Buitrago, Wolfgang A. Vitale, Luca De-Michielis
ABB (Switzerland)
来源Microelectronics Reliability
年份2021
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工程Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices · Radiation Effects in Electronics
参考文献 3
Long Term Stability and Drift Phenomena of different Trench IGBT Structures under Repetitive Switching Tests
被引 14Thomas Laska, F. Hille, Frank Pfirsch · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2007
Extraction of dynamic avalanche during IGBT turn off
被引 13Silvan Geissmann, Luca De Michielis, C. Corvasce · Microelectronics Reliability · 2017
IGBT with superior long-term switching behavior by asymmetric trench oxide
被引 13Christian Sandow, P. C. Brandt, H.P. Felsl · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2018
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引用本文 1
Experimental Demonstration of Point-Injection Trench IGBT Concept
被引 0Elizabeth Buitrago, Marina Antoniou, Nick Schneider · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2023
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