研究论文

High-resolution characterization of nitrogen doping concentration uniformity in n-type 4H-SiC wafers based on near-ultraviolet photoluminescence

Dapeng Chang, Mengyan Li, Xiufang Chen, Xianglong Yang, Muqing Zhang, Xuejian Xie, Xuanyi Zhao, Hui Chen 等 10 位

Shandong University　State Key Laboratory of Crystal Materials　ON Semiconductor (United States)

来源Materials Science in Semiconductor Processing

年份2026

DOI10.1016/j.mssp.2026.110580

原文https://doi.org/10.1016/j.mssp.2026.110580

内容与影响

摘要 · 节选

暂未获取摘要。可打开原文或 PDF，后续可基于全文生成更完整的速读。

逐年被引趋势

210

226

关键指标

被引次数 · OpenAlex

9.66

领域内被引倍数
同类平均 = 1

前 2%

引用位次
同领域 · 同年份 · 同类型

参考文献

Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。

AI 辅助阅读

依据：文献信息

论文问答

依据：文献信息 · 当前未解析全文

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依据：当前详情页数据

学术脉络

学科主题

工程

Silicon Carbide Semiconductor Technologies

Integrated Circuits and Semiconductor Failure Analysis · Silicon and Solar Cell Technologies

参考文献 26

Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC

Sashi Kumar Chanda, Yaroslav Koshka, M. Yoganathan · Journal of Electronic Materials · 2006

被引 6

Determination of doping levels and their distribution in SiC by optical techniques

Peter J. Wellmann, Roland Weingärtner · Materials Science and Engineering B · 2003

被引 26

Raman scattering study of carrier-transport and phonon properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">Si</mml:mi><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math>crystals with graded doping

S. Nakashima, Tatsuya Kitamura, Takeshi Mitani · Physical Review B · 2007

被引 69

此处列出前 3 条

施引文献 2

High-accuracy quantitative metrology of dislocations in heavily doped 4H–SiC substrates based on photoluminescence imaging

Lulu Yu, Yihang Qiu, Zhi-Li Hu · Measurement Science and Technology · 2026

被引 0

Stress competition mechanism and ultra-clean process optimization of Marangoni drying for weak-hydrophilic 4H-SiC wafers

M Li, Huiqing Chen, Huiqing Chen · Journal of Material Science and Technology · 2026

被引 0

按被引量排序，此处列出前 3 条

研究论文

High-resolution characterization of nitrogen doping concentration uniformity in n-type 4H-SiC wafers based on near-ultraviolet photoluminescence

Dapeng Chang, Mengyan Li, Xiufang Chen, Xianglong Yang, Muqing Zhang, Xuejian Xie, Xuanyi Zhao, Hui Chen 等 10 位

Shandong University　State Key Laboratory of Crystal Materials　ON Semiconductor (United States)

来源Materials Science in Semiconductor Processing

年份2026

DOI10.1016/j.mssp.2026.110580

原文https://doi.org/10.1016/j.mssp.2026.110580

内容与影响

摘要 · 节选

暂未获取摘要。可打开原文或 PDF，后续可基于全文生成更完整的速读。

逐年被引趋势

210

226

关键指标

被引次数 · OpenAlex

9.66

领域内被引倍数
同类平均 = 1

前 2%

引用位次
同领域 · 同年份 · 同类型

参考文献

Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。

AI 辅助阅读

依据：文献信息

论文问答

依据：文献信息 · 当前未解析全文

回答优先基于摘要、文献信息与可获取全文；依据不足时会明确说明。

依据：当前详情页数据

学术脉络

学科主题

工程

Silicon Carbide Semiconductor Technologies

Integrated Circuits and Semiconductor Failure Analysis · Silicon and Solar Cell Technologies

参考文献 26

Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC

Sashi Kumar Chanda, Yaroslav Koshka, M. Yoganathan · Journal of Electronic Materials · 2006

被引 6

Determination of doping levels and their distribution in SiC by optical techniques

Peter J. Wellmann, Roland Weingärtner · Materials Science and Engineering B · 2003

被引 26

S. Nakashima, Tatsuya Kitamura, Takeshi Mitani · Physical Review B · 2007

被引 69

此处列出前 3 条

施引文献 2

High-accuracy quantitative metrology of dislocations in heavily doped 4H–SiC substrates based on photoluminescence imaging

Lulu Yu, Yihang Qiu, Zhi-Li Hu · Measurement Science and Technology · 2026

被引 0

Stress competition mechanism and ultra-clean process optimization of Marangoni drying for weak-hydrophilic 4H-SiC wafers

M Li, Huiqing Chen, Huiqing Chen · Journal of Material Science and Technology · 2026

被引 0

按被引量排序，此处列出前 3 条