研究论文
Photoemission characteristics of graded band-gap AlGaAs/GaAs wire photocathode
Xiaojun Ding, Xiaowan Ge, Ji‐Jun Zou, Yijun Zhang, Xincun Peng, Wenjuan Deng, Zhaoping Chen, Wenjun Zhao 等 9 位
East China University of Technology Nanjing University of Science and Technology
来源Optics Communications
年份2016
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逐年被引趋势
740
17
18
19
720
21
22
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25
26
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36
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1.82
领域内被引倍数
同类平均 = 1
同类平均 = 1
前 17%
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同领域 · 同年份 · 同类型
24
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学术脉络
学科主题
工程Photocathodes and Microchannel Plates
GaN-based semiconductor devices and materials · Ga2O3 and related materials
参考文献 24
Factors Affecting the Top Stripping of GaAs Microwire Array Fabricated by Inductively Coupled Plasma Etching
被引 6Ying Cheng, Jijun Zou, Wan Ming · Chinese Physics Letters · 2015
Cooled Transmission-Mode NEA-Photocathode with a Band-Graded Active Layer for High Brightness Electron Source
被引 20L. B. Jones, S. A. Rozhkov, V. V. Bakin · AIP conference proceedings · 2009
MBE Growth of Graded Structures for Polarized Electron Emitters
被引 5A. M. Moy, T. Maruyama, Fang-Cheng Zhou · AIP conference proceedings · 2009
此处列出前 3 条
引用本文 36
Research on quantum efficiency and photoemission characteristics of exponential-doping GaN nanowire photocathode
被引 49Sihao Xia, Lei Liu, Yu Diao · Journal of Materials Science · 2017
High-quantum-efficiency ultraviolet solar-blind AlGaN photocathode detector with a sharp spectral sensitivity threshold at 300 nm
被引 38Guanghua Tang, Feng Yan, Xinlong Chen · Applied Optics · 2018
Research on quantum efficiency of GaN wire photocathode
被引 35Sihao Xia, Lei Liu, Yu Diao · Optical Materials · 2016
按被引量排序，此处列出前 3 条