研究论文

Sub-100 nm MOSFET fabrication with low temperature resist trimming process

Shajan Mathew, Ranganathan Nagarajan, L. K. Bera, Feng Han Hua, Du An Yan, N. Balasubramanian

Singapore Science Park　Institute of Microelectronics

来源Thin Solid Films

年份2004

DOI10.1016/j.tsf.2004.05.021

原文https://doi.org/10.1016/j.tsf.2004.05.021

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摘要与影响

摘要 · 节选

暂未获取摘要。可打开原文或 PDF，后续可基于全文生成更完整的速读。

逐年被引趋势

110

112

关键指标

被引次数 · OpenAlex

0.63

领域内被引倍数
同类平均 = 1

前 28%

引用位次
同领域 · 同年份 · 同类型

参考文献

Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。

学术脉络

学科主题

工程

Advancements in Photolithography Techniques

Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design

参考文献 4

Design and characterization of compact 100 nm-scale silicon metal–oxide–semiconductor field effect transistors

C. M. Reeves, Shalom J. Wind, F. J. Hohn · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992

被引 5

Gate technology for 0.1-μm Si complementary metal–oxide–semiconductor using g-line exposure and deep ultraviolet hardening

Dae‐Young Jeon, G.M. Chin, K. F. Lee · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994

被引 5

Fabrication of sub-50-nm gate length n-metal–oxide–semiconductor field effect transistors and their electrical characteristics

Mizuki Ono, Masanobu Saito, T. Yoshitomi · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995

被引 28

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