研究论文
Initial growth mechanism of atomic layer deposited titanium dioxide using cyclopentadienyl-type precursor: A density functional theory study
Guangfen Zhou, Jie Ren, Shaowen Zhang
Beijing Institute of Technology Hebei University of Science and Technology
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工程Semiconductor materials and devices
Electronic and Structural Properties of Oxides · Catalytic Processes in Materials Science
参考文献 64
Density functional theory study of HfCl4, ZrCl4, and Al(CH3)3 decomposition on hydroxylated SiO2: Initial stage of high-k atomic layer deposition
被引 73L. Jeloaica, Alain Estève, M. Djafari Rouhani · Applied Physics Letters · 2003
HfO[sub 2] Films Grown by ALD Using Cyclopentadienyl-Type Precursors and H[sub 2]O or O[sub 3] as Oxygen Source
被引 43Jaakko Niinistö, Matti Putkonen, Lauri Niinistö · Journal of The Electrochemical Society · 2006
Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(100)-2×1: A density functional theory study
被引 12Jie Ren, Guangfen Zhou, Yongqi Hu · Applied Surface Science · 2009
此处列出前 3 条
引用本文 9
Titanium dioxide thin films by atomic layer deposition: a review
被引 172Janne‐Petteri Niemelä, Giovanni Marín, Maarit Karppinen · Semiconductor Science and Technology · 2017
Role of Cyclopentadienyl Ligands of Group 4 Precursors toward High-Temperature Atomic Layer Deposition
被引 26Tran Thi Ngoc Van, Donghak Jang, Eun‐Ae Jung · The Journal of Physical Chemistry C · 2022
Kinetic study on initial surface reaction of titanium dioxide growth using tetrakis(dimethylamino)titanium and water in atomic layer deposition process: Density functional theory calculation
被引 15Tanabat Promjun, Tanattha Rattana, P. Pungboon Pansila · Chemical Physics · 2022
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