研究论文
High resolution transmission electron microscopy study of the initial growth of diamond on silicon
Tiejun Lin, Kian Ping Loh, Andrew T. S. Wee, Zexiang Shen, Jianyi Lin, C.-H. Lai, Qin Gao, T.J Zhang
National University of Singapore Peking University Institute of Materials Research and Engineering
来源Diamond and Related Materials
年份2000
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逐年被引趋势
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9
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0.86
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同类平均 = 1
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学术脉络
学科主题
材料 / 化学Diamond and Carbon-based Materials Research
Metal and Thin Film Mechanics · Silicon Carbide Semiconductor Technologies
参考文献 25
Bias-enhanced diamond nucleation on silicon—a TEM study
被引 23P. Wurzinger, Peter Pongratz, J. Gerber · Diamond and Related Materials · 1996
Effect of high supersaturation at the initial stage on diamond nucleation phenomena
被引 13Yoshitaka Mitsuda, Taro Moriyasu, Noboru Masuko · Diamond and Related Materials · 1993
I n s i t u characterization of diamond nucleation and growth
被引 186David N. Belton, Stephen J. Harris, Steven J. Schmieg · Applied Physics Letters · 1989
此处列出前 3 条
引用本文 9
HIGHLY ORIENTED DIAMOND FILMS ON HETEROSUBSTRATES: CURRENT STATE OF THE ART AND REMAINING CHALLENGES
被引 28Jean‐Charles Arnault · Surface Review and Letters · 2003
High resolution study of the strong diamond/silicon nitride interface
被引 15Flávia A. Almeida, Filipe José Oliveira, Rui F. Silva · Applied Physics Letters · 2011
BEN-HFCVD diamond nucleation on Si(111) investigated by HRTEM and nanodiffraction
被引 15Stéphane Pecoraro, Jean‐Charles Arnault, J. Werckmann · Diamond and Related Materials · 2004
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