研究论文
Sidewall surface chemistry in directional etching processes
Gottlieb S. Oehrlein, Yukinori Kurogi
University at Albany, State University of New York Kyushu University
来源Materials Science and Engineering R Reports
年份1998
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学术脉络
学科主题
工程Semiconductor materials and devices
Plasma Diagnostics and Applications · Metal and Thin Film Mechanics
参考文献 83
Reactive Ion Etching of Silicon and Silicon Dioxide in CF 4 Plasmas Containing H 2 or C 2 F 4 Additives
被引 22Jeffry Simko, Gottlieb S. Oehrlein · Journal of The Electrochemical Society · 1991
Parameter and Reactor Dependence of Selective Oxide RIE in CF 4 + H 2
被引 56L. M. Ephrath, Edward J. Petrillo · Journal of The Electrochemical Society · 1982
Studies of synchrotron radiation emission from the modified betatron accelerator
被引 3Tab J. Smith, Jeffery Golden, C. A. Kapetanakos · Journal of Applied Physics · 1991
此处列出前 3 条
引用本文 97
Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment
被引 296Henri V. Jansen, Meint J. de Boer, S. Unnikrishnan · Journal of Micromechanics and Microengineering · 2009
Atomic Layer Etching at the Tipping Point: An Overview
被引 293Gottlieb S. Oehrlein, Dominik Metzler, Chen Li · ECS Journal of Solid State Science and Technology · 2015
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies
被引 270Rémi Dussart, Thomas Tillocher, Philippe Lefaucheux · Journal of Physics D Applied Physics · 2014
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