Deterministic Placement of Achiral Emitters in Superchiral Fields for Superior Chiral Photoluminescence

Chiral luminescence holds promise for various applications, but achieving strong, pixelated emission with a large dissymmetry factor ( g lum ) for on-chip integration remains challenging. Here we address this challenge by optically growing CdS emitters within the superchiral fields of Au spiral metasurfaces. This precise placement enhances emitter–field interaction, yielding chiral photoluminescence with a g lum of up to ∼0.5 and an ∼30-fold intensity enhancement. We demonstrate that both the excitation wavelength and emitter location significantly impact chiral luminescence quality, highlighting the critical role of resonant excitation and spatial alignment with superchiral fields. These findings provide crucial guidelines for designing high-performance chiral luminescence devices suitable for on-chip photonic integration.