High-Performance Visible to Mid-Infrared Photodetectors Based on HgTe Colloidal Quantum Dots under Room Temperature
Kai Xia, Xu Gao, Guang Tao Fei, Shao Hui Xu, Yi Liang, Xiao Xuan Qu
University of Science and Technology of China Chinese Academy of Sciences Hefei Institutes of Physical Science Institute of Solid State Physics
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摘要与影响
HgTe colloidal quantum dots (CQDs) are one of few materials that can realize near-to-midwave infrared photodetection. And the quality of HgTe CQD directly affects the performance of photodetection. In this work, we optimize the method of synthesizing HgTe CQDs to reduce the defect concentration, therefore improving the photoelectric properties. The photodetector based on HeTe CQD can respond to the light from the visible to mid-infrared band. Notably, a photoresponse to 4000 nm light at room temperature is realized. The responsivity and detectivity are 90.6 mA W –1 and 6.9 × 10 7 Jones under 1550 nm light illumination, which are better than these of most reported HgTe CQD photodetectors. The response speed reaches a magnitude of microseconds with a rising time of τ r = 1.9 μs and a falling time of τ f = 1.5 μs at 10 kHz under 1550 nm light illumination.
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材料 / 化学Quantum Dots Synthesis And Properties
Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films
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