AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational autoencoder
F. L. Wang, Hui Yu, Yechen Miao, Ke Sun, Yi Sun, Heng Yang, Xinxin Li
Chinese Academy of Sciences State Key Laboratory of Transducer Technology Shanghai Institute of Microsystem and Information Technology University of Chinese Academy of Sciences
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摘要与影响
Deep reactive ion etching (DRIE) is critical for fabricating high-aspect-ratio structures in microelectromechanical systems (MEMS), yet its complex, parameter-dependent process poses significant optimization challenges. Artificial intelligence (AI) offers an efficient optimization solution, but its implementation faces the technical challenge of acquiring large-scale data from scanning electron microscopy (SEM) images, the standard for evaluating DRIE etching outcomes. Traditional SEM analysis relies on labor-intensive manual methods, incurring 15-20% errors and hindering high-throughput manufacturing. Existing automated methods, such as CNNs and SVMs, falter with 70-80% accuracy in noisy SEM images, failing to capture the dynamic evolution of etched structures. To address these limitations, we propose a physics-constrained variational level set autoencoder (VLSet-AE) for automated SEM sectional-profile analysis. By integrating physical etching constraints and a three-dimensional framework (time, linewidth, etching depth), VLSet-AE achieves precise contour recognition and nine critical dimensions extraction-scallop depth (2.29%), scallop width (peak-to-peak: 2.05%, valley-to-valley: 6.28%), scallop radius (4.69%), profile angle (0.56%), trench depth (5.46%), bow width (4.35%), mid width (2.43%), and bottom width (4.78%)-with an average error of 3.65% an overall model accuracy of 94.3%, significantly outperforming manual annotation and state-of-the-art alternatives. Compared to seven current models (e.g., CNNs, LSTMs, ResNet), VLSet-AE achieves the shortest training time (20 s), fastest inference time (1.2 s), highest recognition accuracy (96%), and competitive memory usage (50 MB) and parameter count (4.0 million). By enabling efficient, large-scale data acquisition for AI-optimized DRIE processes, VLSet-AE empowers scalable, intelligent manufacturing, unlocking the potential for advanced microfabrication technologies. This approach provides a forward-looking framework for AI-driven MEMS process design and manufacturing, delivering innovative solutions for future AI-assisted microfabrication advancements.
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工程Advanced MEMS and NEMS Technologies
Low-Pressure Plasma Processing and Diagnostics · Industrial Vision Systems and Defect Detection