Ultrabright and stable top-emitting quantum-dot light-emitting diodes with negligible angular color shift
Mengqi Li, Rui Li, Longjia Wu, Xiongfeng Lin, Xueqing Xia, Zitong Ao, Xiaojuan Sun, Xingtong Chen 等 9 位
Soochow University TCL (China)
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摘要与影响
Top emission can enhance luminance, color purity, and panel-manufacturing compatibility for emissive displays. Still, top-emitting quantum-dot light-emitting diodes (QLEDs) suffer from poor stability, low light outcoupling, and non-negligible viewing-angle dependence because, for QLEDs with non-red emission, the electrically optimum device structure is incompatible with single-mode optical microcavity. Here, we demonstrate that by improving the way of determining reflection penetration depths and creating refractive-index-lowering processes, the issues faced by green QLEDs can be overcome. This leads to advanced device performance, including a luminance exceeding 1.6 million nits, a current efficiency of 204.2 cd A −1 , and a T 95 operational lifetime of 15,600 hours at 1000 nits. Meanwhile, our design does not compromise light outcoupling as it offers an external quantum efficiency of 29.2% without implementing light extraction methods. Lastly, an angular color shift of Δ u’v’ = 0.0052 from 0° to 60° is achieved by narrowing the emission linewidth of quantum dots.
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材料 / 化学Quantum Dots Synthesis And Properties
Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
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