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Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits
Rishi Maiti, Chandraman Patil, M. A. S. R. Saadi, Ti Xie, Javad G. Azadani, Berkin Uluutku, Rubab Amin, Andrew Briggs 等 15 位
George Washington University University of Minnesota The University of Texas at Austin Ghent University
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学术脉络
学科主题
材料 / 化学2D Materials and Applications
Photonic and Optical Devices · Mechanical and Optical Resonators
参考文献 55
Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
被引 385Sajedeh Manzeli, Adrien Allain, Amir H. Ghadimi · Nano Letters · 2015
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS 2
被引 960Keliang He, Charles Poole, Kin Fai Mak · Nano Letters · 2013
Kelvin probe force microscopy and its application
被引 1,693Wilhelm Melitz, Jian Shen, Andrew C. Kummel · Surface Science Reports · 2010
此处列出前 3 条
引用本文 322
Silicon/2D-material photodetectors: from near-infrared to mid-infrared
被引 470Chaoyue Liu, Jingshu Guo, Laiwen Yu · Light Science & Applications · 2021
Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection
被引 391Di Wu, Chenguang Guo, Longhui Zeng · Light Science & Applications · 2023
Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering
被引 340Qingyi Zhang, Ning Li, Tao Zhang · Nature Communications · 2023
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