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Multidimensional device architectures for efficient power electronics
Yuhao Zhang, Florin Udrea, Han Wang
Virginia Tech University of Cambridge University of Southern California
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学术脉络
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工程Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
参考文献 112
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
被引 292Gang Liu, Blair Tuttle, Sarit Dhar · Applied Physics Reviews · 2015
Theoretical limits of superjunction considering with charge imbalance margin
被引 33Wataru Saito · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2015
MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
被引 61Yu Cao, Kejia Wang, Guowang Li · Journal of Crystal Growth · 2010
此处列出前 3 条
引用本文 231
Stability, Reliability, and Robustness of GaN Power Devices: A Review
被引 436Joseph P. Kozak, Ruizhe Zhang, Matthew Porter · IEEE Transactions on Power Electronics · 2023
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
被引 197Yuan Qin, Benjamin Albano, Joseph A. Spencer · Journal of Physics D Applied Physics · 2023
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
被引 190Feng Zhou, Hehe Gong, Ming Xiao · Nature Communications · 2023
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