研究论文
A monolithic three-dimensional integrated red micro-LED display on silicon using AlInP/GaInP epilayers
JuHyuk Park, Woojin Jayce Baek, Hyunsu Kim, Dongsoon Jung, HoKwon Kim, Baul Kim, Yong-Hoon Cho, J. H. Lee 等 20 位
Korea Advanced Institute of Science and Technology Sewon Cellontech (South Korea) Korea University of Technology and Education Inha University
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逐年被引趋势
420
426
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4
被引次数 · OpenAlex
18.64
领域内被引倍数
同类平均 = 1
同类平均 = 1
前 0.7%
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同领域 · 同年份 · 同类型
同领域 · 同年份 · 同类型
47
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学术脉络
学科主题
物理GaN-based semiconductor devices and materials
Thin-Film Transistor Technologies · Photonic and Optical Devices
参考文献 47
Electronic properties of InGaP grown by solid-source molecular-beam epitaxy with a GaP decomposition source
被引 110T. Shitara, K. Eberl · Applied Physics Letters · 1994
Development of InGaN-based red LED grown on (0001) polar surface
被引 269Jong-Il Hwang, Rei Hashimoto, S. Saito · Applied Physics Express · 2014
Defect study of MOVPE-grown InGaP layers on GaAs
被引 6A. Knauer, P. Krispin, V.R. Balakrishnan · Journal of Crystal Growth · 2004
此处列出前 3 条
引用本文 4
Hybrid Integration of Tunnel-Junction InGaN/GaN and Wafer-Bonded AlGaInP/GaInP for Full-Color Micro-LEDs
被引 2JuHyuk Park, Eun Jeong Youn, Hyun Soo Kim · ACS Applied Materials & Interfaces · 2026
The Origin of Efficiency in III‐Nitride Micro‐Light‐Emitting Diodes
被引 1Jeong‐Hwan Park, Markus Pristovsek, Dong‐Pyo Han · Advanced Science · 2026
Deuterium-enabled stabilization of metal/oxide interfaces <i>via</i> suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors
被引 0Woosup Byun, Tae-Hyun Kil, Bong Ho Kim · Journal of Materials Chemistry C · 2026
按被引量排序，此处列出前 3 条