Overcoming intrinsic defects of the hole transport layer with optimized carbon nanorods for perovskite solar cells
Zhiqi Li, Jiajun Dong, Wenbin Han, Guanhua Ren, Chunyu Liu, Houxiao Cui, Liang Shen, Wenbin Guo
Jilin University State Key Laboratory on Integrated Optoelectronics Integrated Optoelectronics (Norway) State Council of the People's Republic of China
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摘要与影响
To overcome the intrinsic chemical-reduction-activity of highly p-doped PEDOT:PSS and improve the open-circuit voltage (Voc) of planar inverted perovskite solar cells, a kind of oxidized carbon nanorods (OCNRs) is developed by a ball-milling/chemical-oxidation method and incorporated into PEDOT:PSS hole transport layer (HTL). The incorporation of OCNRs can increase the work function of the PEDOT:PSS layer, which avoids the energy-level mismatch between the PEDOT:PSS HTL and the HOMO level of the CH3NH3PbI3 perovskite layer, leading to a relatively high Voc of 1.01 V (vs. 0.92 V for the PEDOT:PSS device). Moreover, the introduction of OCNRs into the PEDOT:PSS HTL increases the grain size and uniformity of the perovskite layer, accompanied by the improved charge transport ability. As a result, the fill factor of perovskite solar cells is increased from 75.4% to 81.7%, and the best power conversion efficiency of 19.02% is achieved.
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工程Perovskite Materials and Applications
Conducting polymers and applications · Chalcogenide Semiconductor Thin Films
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