研究论文
High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory
Giuk Kim, Sang-Ho Lee, Taehyong Eom, Taeho Kim, Minhyun Jung, Hunbeom Shin, Yeongseok Jeong, Myounggon Kang 等 9 位
Korea Advanced Institute of Science and Technology Korea National University of Transportation
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摘要与影响
摘要 · 完整
This article presents a 3D ferroelectric NAND flash memory with a wide MW, low operation voltage, fast PGM/ERS speed, and higher endurable cycles based on a HfZrO film that shows excellent ferroelectricity even at a relatively thick thickness.
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学术脉络
学科主题
工程Ferroelectric and Negative Capacitance Devices
Semiconductor materials and devices · Electronic and Structural Properties of Oxides
参考文献 32
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
被引 818Min Hyuk Park, Han‐Joon Kim, Yu Jin Kim · Applied Physics Letters · 2013
Device modeling of ferroelectric memory field-effect transistor (FeMFET)
被引 169Hang-Ting Lue, Chien-Jang Wu, Tseung‐Yuen Tseng · IEEE Transactions on Electron Devices · 2002
Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films
被引 241Min Hyuk Park, Han‐Joon Kim, Yu Jin Kim · ACS Applied Materials & Interfaces · 2016
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引用本文 42
Ferroelectric Transistors for Memory and Neuromorphic Device Applications
被引 247Ik‐Jyae Kim, Jang‐Sik Lee · Advanced Materials · 2022
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing
被引 67V. Gaddam, Giuk Kim, Taeho Kim · ACS Applied Materials & Interfaces · 2022
Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices
被引 30Yeongseok Jeong, V. Gaddam, Youngin Goh · IEEE Transactions on Electron Devices · 2022
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