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Advancements and hurdles in contact engineering for miniaturized sub-micrometer oxide semiconductor devices
Joo Hee Jeong, Joo Hee Jeong, Jeong Eun Oh, Dongseon Kim, Daewon Ha, Jae Kyeong Jeong, Jae Kyeong Jeong
Hanyang University Samsung (South Korea)
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摘要与影响
摘要 · 完整
For DRAM node downscaling, planar oxide-channel transistors must transition to VCT. This review explores strategies to reduce contact resistance, including conductive region formation, n + layer insertion, metal selection, and surface engineering.
逐年被引趋势
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26
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14
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3.97
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同类平均 = 1
前 6%
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同领域 · 同年份 · 同类型
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学术脉络
学科主题
工程Semiconductor Lasers and Optical Devices
Semiconductor materials and devices · Nanowire Synthesis and Applications
参考文献 100
High-Performance Homojunction a-IGZO TFTs With Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes
被引 52Jae Kwang Um, Suhui Lee, Seonghyun Jin · IEEE Transactions on Electron Devices · 2015
An Investigation on Border Traps in III–V MOSFETs With an In<sub>0.53</sub>Ga<sub>0.47</sub>As Channel
被引 52Zhigang Ji, Xiong Zhang, J. Franco · IEEE Transactions on Electron Devices · 2015
Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors
被引 116Kwang-Hyuk Choi, Han‐Ki Kim · Applied Physics Letters · 2013
此处列出前 3 条
引用本文 14
Enhancing Threshold Voltage Stability in Low-Temperature Processed IGZO TFTs
被引 10Gahong Lee, Yunhui Jang, Yeojin Jeong · Transactions on Electrical and Electronic Materials · 2025
Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory
被引 5Sang Won Chung, Seong Hun Yoon, Jae Kyeong Jeong · Communications Engineering · 2026
Contact resistance reduction in amorphous In–Ga–Zn–O thin film transistors by interposing an atomic-layer-deposited amorphous Zn–Sn–O interlayer
被引 4Shihyun Kim, Hyungjeung Kim, Jinheon Choi · Journal of Materials Chemistry C · 2025
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