研究论文
Realization of 4-inch diameter and thick β-Ga 2 O 3 single crystals using the vertical Bridgman method
Dongyang Huang, Haotian Huang, Ziqian Xu, Yongqiang Jin, Ziming Wang, Bowen Jiang, Mingyan Pan, Ning Jia 等 9 位
Chinese Academy of Sciences Shanghai Institute of Optics and Fine Mechanics Tsinghua University
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摘要与影响
摘要 · 完整
Large-diameter β-Ga 2 O 3 bulk single crystals (4-inch, >30 mm thick) were grown by a modified vertical Bridgman method, yielding high structural quality and low-defect wafers for power device applications.
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学术脉络
学科主题
材料 / 化学Ga2O3 and related materials
GaN-based semiconductor devices and materials · Thin-Film Transistor Technologies
参考文献 40
Electrical properties of β -Ga2O3 single crystals grown by the Czochralski method
被引 565K. Irmscher, Zbigniew Galazka, Mike Pietsch · Journal of Applied Physics · 2011
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
被引 666Zbigniew Galazka, K. Irmscher, Reinhard Uecker · Journal of Crystal Growth · 2014
Characterization of defects in β-Ga 2 O 3 single crystals
被引 87Katsuhiko Nakai, Tetsuya Nagai, Kengo Noami · Japanese Journal of Applied Physics · 2015
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引用本文 1
First-principles insight into electrical characteristics of rhodium in vertical Bridgman-grown β-Ga2O3 with experimental validation
被引 0Jiaxiang He, Cheng Li, Yuchao Yan · Journal of Applied Physics · 2026
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