研究论文
High-performance dynamic random access memory capacitor with an equivalent oxide thickness of 0.31 nm via stepwise cycling in Y-doped Hf 0.5 Zr 0.5 O 2 thin films
Jonghoon Shin, Haengha Seo, Janguk Han, Tae Kyun Kim, Heewon Paik, Haewon Song, Han-Sub Yoon, Han Sol Park 等 16 位
Seoul National University National University College
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摘要与影响
摘要 · 完整
This study investigates the field-induced ferroelectric (FFE) characteristics and dynamic random access memory (DRAM) capacitor performance of Y-doped Hf 0.5 Zr 0.5 O 2 (Y:Hf 0.5 Zr 0.5 O 2 ) thin films grown by atomic layer deposition (ALD).
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学术脉络
学科主题
工程Ferroelectric and Negative Capacitance Devices
Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
参考文献 76
Reducing the nano-scale defect formation of atomic-layer-deposited SrTiO3 films by adjusting the cooling rate of the crystallization annealing of the seed layer
被引 17Woongkyu Lee, Sijung Yoo, Woojin Jeon · Thin Solid Films · 2015
Prospective of Semiconductor Memory Devices: from Memory System to Materials
被引 243Cheol Seong Hwang · Advanced Electronic Materials · 2015
First-principles study on doping and phase stability of HfO2
被引 286Choong‐Ki Lee, Eunae Cho, Hyosug Lee · Physical Review B · 2008
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引用本文 1
Wake‐Up and Fatigue under Electrical Cycling in HfO 2 ‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices
被引 0H. S. Kim, Shinhyeong Lee, Hyojun Choi · Advanced Science · 2026
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