High quality factor Er3+-activated dielectric microcavity fabricated by rf sputtering

The authors report on one-dimensional dielectric photonic crystals activated by Er3+ ion and fabricated by rf-sputtering deposition. The cavity was constituted by an Er3+-doped SiO2 active layer inserted between two Bragg reflectors consisting of six pairs of SiO2∕TiO2 layers. Near infrared transmittance spectra evidence the presence of a stop band from 1350to1850nm and a cavity resonance centered at 1537nm. Intensity enhancement and narrowing of the I13∕24→I15∕24 emission band of Er3+ ion, due to the cavity effect, were observed. A cavity quality factor of 171 was achieved.