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Microwave rectification by a carbon nanotube Schottky diode
Enrique Cobas, Michael S. Fuhrer
University of Maryland, College Park
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Carbon nanotube Schottky diodes have been fabricated in an all-photolithographic process using dissimilar contact metals on high-frequency compatible substrates (quartz and sapphire). Diodes show near-ideal behavior and rectify currents of up to 100nA and at frequencies of up to 18GHz. The voltage and frequency dependence is used to estimate the junction capacitance of ∼10−18F and the intrinsic device cutoff frequency of ∼400GHz.
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学术脉络
学科主题
材料 / 化学Carbon Nanotubes in Composites
Radio Frequency Integrated Circuit Design · Gyrotron and Vacuum Electronics Research
参考文献 25
Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers
被引 1,333Jing Kong, H. Tom Soh, Alan M. Cassell · Nature · 1998
Multiwalled carbon nanotube: Luttinger versus Fermi liquid
被引 116Reeta Tarkiainen, M. Ahlskog, Jari Penttilä · Physical review. B, Condensed matter · 2001
Schottky barrier formation at a carbon nanotube—metal junction
被引 47Wenguang Zhu, Efthimios Kaxiras · Applied Physics Letters · 2006
此处列出前 3 条
施引文献 36
Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
被引 1,260Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon · Chemical Society Reviews · 2012
Schottky barriers in carbon nanotube-metal contacts
被引 205Johannes Svensson, E. E. B. Campbell · Journal of Applied Physics · 2011
Roadmap on energy harvesting materials
被引 116Vincenzo Pecunia, S. Ravi P. Silva, Jamie Phillips · Journal of Physics Materials · 2023
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