>95% TM-polarized 780 nm diode laser enabled by GA–NN co-optimization of quantum states and optical states

We demonstrate a high-performance 780 nm diode laser, achieving a transverse-magnetic degree of polarization of >95.2% and a wall-plug efficiency of 56.23% at an injection current of 10 A. This performance stems from the synergistic co-optimization of a tensile-strained GaAsP quantum well and the P-side cladding and contact layers. A hybrid genetic-algorithm–neural-network framework was employed to navigate the complex design space, reducing device evaluation time from 540 to 4 ms. Our work establishes an efficient, physically grounded design paradigm for polarization-sensitive lasers critical in atomic physics and quantum technology.