研究论文
A model for the halogen-based plasma etching of silicon
Jacques Pelletier
来源Journal of Physics D Applied Physics
年份1987
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摘要与影响
摘要 · 完整
The different models for the spontaneous and plasma etching of silicon are compared with the experimental results and discussed. A detailed study is particularly made of the consequences of ion bombardment on the etching kinetics and its effects observed during etching. The respective contributions of each model are dealt with in a final synthesis.
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学术脉络
学科主题
工程Plasma Diagnostics and Applications
Plasma Applications and Diagnostics · Semiconductor materials and devices
参考文献 48
Chemical relaxation molecular beam studies of reactive gas-solid scattering
被引 82R. J. Madix, James A. Schwarz · Surface Science · 1971
The etching of silicon with XeF2 vapor
被引 309Harold F. Winters, J. W. Coburn · Applied Physics Letters · 1979
Surface core-level shifts for clean and halogen-covered Ge(100) and Ge(111)
被引 102R.D. Schnell, F. J. Himpsel, A. Bogen · Physical review. B, Condensed matter · 1985
此处列出前 3 条
引用本文 45
The etching of polymers in oxygen-based plasmas: A parametric study
被引 93O. Joubert, Jacques Pelletier, Y. Arnal · Journal of Applied Physics · 1989
RF Plasmas in Methane: Prediction of Plasma Properties and Neutral Radical Densities with Combined Gas-Phase Physics and Chemistry Model
被引 87Εvangelos Gogolides, David L. Mary, Ahmed Rhallabi · Japanese Journal of Applied Physics · 1995
Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition
被引 86Εvangelos Gogolides, P. Vauvert, George Kokkoris · Journal of Applied Physics · 2000
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