Recent progress in Ga 2 O 3 power devices

This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga 2 O 3 ) power devices. Ga 2 O 3 possesses excellent material properties, in particular for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured from a single-crystal bulk synthesized by melt–growth methods. These two features have drawn much attention to Ga 2 O 3 as a new wide bandgap semiconductor following SiC and GaN. In this review, we describe the recent progress in the research and development on fundamental technologies of Ga 2 O 3 devices, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy, as well as device processing and characterization of metal–semiconductor field-effect transistors, metal–oxide–semiconductor field-effect transistors and Schottky barrier diodes.