Novel FOM-enhanced sided-shield gate trench MOSFET with super-junction structure

In this paper, a novel sided-shield gate trench MOSFET with super-junction structure (SJ-SSGT) is proposed for the first time. By introducing both a SJ drift region and a SSGT together, the specific on-state resistance R ds(on) is reduced by about 21%, while the breakdown voltage is increased by about 57% compared with a conventional SGT MOSFET. In that case, the coupling of the SJ and the SSGT will lead to an approximately twofold improvement in the figure of merit of the device. The breakdown and conduction mechanism is investigated in detail by 3D TCAD simulations. Furthermore, the influences of drift-region doping concentration, SJ doping concentration, sided-shield gate length, and SJ length are systematically studied to optimize the proposed SJ-SSGT.