Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration

We demonstrate bandgap tuning of InGaAsP multiple quantum well structures by utilizing an impurity-free vacancy diffusion technique. Substantial modification of the bandgap energy toward the red and blue parts of the spectrum has been observed using SiO 2 /SiO y N x /SiN x capping layers and by controlling the associated oxygen and nitrogen content. The resulting degree of tuning, up to 120 nm red shift and 140 nm blue shift of the band-to-band wavelength emission, has been studied using room-temperature photoluminescence, in agreement with the emission spectra obtained from semiconductor optical amplifier waveguide strips.